KSC2331 transistor (npn) feature power dissipation p cm: 1 w (tamb=25 ) collector current i cm: 0.7 a collector-base voltage v (br)cbo : 80 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v(br) cbo ic= 100a, i e =0 80 v collector-emitter breakdown voltage v(br) ceo i c = 10ma, i b =0 60 v emitter-base breakdown voltage v(br) ebo i e = 10a, i c =0 8 v collector cut-off current i cbo v cb =60v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a dc current gain h fe 1 v ce =2v, i c = 50ma 120 240 collector-emitter saturation voltage v ce(sat) i c = 500m a, i b = 50ma 0.7 v base-emitter voltage v be(sat) i c = 500ma, i b = 50ma 1.2 v transition frequency f t v ce = 10v, i c = 50ma 50 mhz classification of h fe (1) rank r o range 40-80 70-140 to-92mod 1. emitter 2. collector 3. base 123 KSC2331 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
